Advances in Metal-Insulator-Semiconductor Device Characterization

Abstract

This article serves a dual purpose. It introduces the low and high-power electrical technology applications of the metal-insulator-semiconductor device and scientifically describes an invented method for MIS device characterization named as BOEMDET using a basic premise of dE/E equals dm/m, where dE and dm are differential kinetic energy and mass of the electron or hole in the insulator material. The differential mass is the electron or hole effective mass in the insulator. The method has been tested and proven to be accurate for the Si/SiO2 and Si/Si3N4 interfaces. In particular, the Si/SiO2 interface has been shown to have a conduction band offset of 3.2 eV and a valence band offset of 4.6 eV correct to one decimal place. The electron and hole effective masses in the amorphous thermal silicon dioxide is determined to be 0.42m and 0.58m correct to two decimal places. Here, m is the free electron mass and the characterization is at 300K temperature. Many applications of the invented method are listed at the end of the article.