Design and Development of Energy Efficient Digital Circuits using hybrid MTJs and CNTFETs

Abstract

In this world, there is always a compromise between the speed and efficiency of electrical equipment. Many of the devices we use are based on CMOS technology. The widespread use of CMOS electronics has resulted in significant power leakage in power tools. This malpractice has led to the development of low power and highly efficient devices. MTJ is a spin-based technology that is non-invasive, almost energy-efficient, and compatible with other devices. Carbon nanotube field effect transistors (CNTFETs) use one or more carbon nanotubes as a medium in the field effect transistor. They demonstrate the movement of ballistic electrons, have a high temperature resistance, and are small due to the nanometer's size. A new model combining MTJs and CNTFETs is proposed. We were able to achieve reduced energy and energy dissipation because to the energy-efficient features of both devices. The MTJ / CMOS and MTJ / CNTFET designs are utilized to implement sensible devices and gates such as AND, NAND, OR, NOR, MUX, and Full Adder. When compared to designs utilizing MTJs / CMOS, designs using MTJs / CNTFETS have 35.15 percent, 29.35 percent, 45.17 percent, 31.86 percent, a 40 percent delay.