Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD

Authors

  • Muhammad Johirul Islam
  • Rifat Sami
  • Md. Shafiqul Islam
  • Md. Iqbal Bahar Chowdhury

Keywords:

Graphene FET, Transfer Characteristics, Output Characteristics, SILVACO TCAD, ATLAS, ATHENA.

Abstract

This work presents a SILVACO TCAD based fabrication and device simulation of a topgated graphene field-effect transistor. Effects of channel length and channel doping
concentrations on the characteristics curves (transfer and output characteristics) of the
GFET are also investigated and analyzed physically to obtain more physical insight.

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Published

2017-12-19

How to Cite

Muhammad Johirul Islam, Rifat Sami, Md. Shafiqul Islam, & Md. Iqbal Bahar Chowdhury. (2017). Study of Characteristics Curves Top-Gated Graphene FET Using SILVACO TCAD. Journal of Electronic Design Engineering, 3(3), 19–27. Retrieved from http://matjournals.co.in/index.php/JOEDE/article/view/6770

Issue

Vol. 3 No. 3 (2017)

Section

Articles