Topologies of Complementary Metal Oxide Semiconductor Transimpedance Amplifier

Abstract

In this paper, a similar investigation of various CMOS amplifier has been introduced. Standard gadget boundaries of transimpedance enhancer like input referred noise, power dissipation is considered and thought about. Here, the transimpedance amplifier is partitioned based on its geography and gadget innovation utilized, also execution is summed up to get the outline. The greater part of the investigation taken are performed on 0.18um technology.