Simulation for characteristics of the Dual-Material Double-Gate MOSFET

Abstract

An analytic model for the channel potential and the subthreshold swing of the dual-material double-gate MOSFET (DMDG MOSFET) is presented. In order to get the analytic description of the channel potential, we have solved Poisson Equation (PE) along the entire channel region and calculated the subthreshold swing by the potential model. It enables us to avoid the complication in the calculation. Results of model are in accord well with Medici simulation results. The results will also give some reference for the design of integrated circuit.