V-groove Structures of Semiconductor Pressure Sensors with mass by Convex Corner Compensation

Abstract

The convex corner compensation methodes to manufacture diaphragms with V-grooves of semiconductor pressure sensors have been widely introduced. However, these methods do not seem to be efficiently used to manufacture very thin diaphragms with square masses. In order to make thin silicon diaphragms with different thicknesses where stresses are compensated, the convex corner compensation method to preserve square shaped convex corners should be established. In this paper, we have designed convex corner compensation patterns to make diaphragms of V-groove structures with mass and proved the superiority of this method by reasonable analysis.