Design and Modeling of 4x4-bit RAM using Memristor

Abstract

The memristor is a non-linear resistor which changes its state relative to the net electric flux
passing through its two terminals. It saves its state after an electrical bias is removed.
Hewlett Packard is credited for the large deal of efforts which has been spent in the research
community to derive a suitable model able to capture the nonlinear dynamics of the nanoscale structures, based on titanium dioxide (TiO2) thin film. When more than one memristors
are connected together than the behavior of the device is difficult to predict because the
polarity-dependent nonlinear variation in the memristance of individual memristor. The
relationships among flux, charge and memristance of diverse composite Memristor, using the
HP-TiO2 model has been studied, and the characteristics of complex memristor circuits are
analyzed. In this work, we are implementing a 4x4-bit RAM using memristor which works as
an EPROM.