The new & accurate techniques developed to analyze the device behaviour under various biasing and different temperature variations- Review

Abstract

A correct analytical sub threshold models has been developed for an undoped double gate
MOSFET .This gives a exceptionally accurate model which matches with the simulations. The
result suggests inside the place of Double gate modeling which can be extended for circuits
like SRAM and RF amplifier layout. The pinnacles of the line quantum mechanical results
which need to be confined in adaptation improvement for below 22nm gadgets are listed.