Investigation of Quantum Efficiency of GaAs/InAs-Based Quantum Well Solar Cell

Abstract

This work investigates the quantum efficiency of a single-junction gallium arsenide/indium arsenide (GaAs/InAs)- based quantum well solar cell (QWSC), where GaAs (InAs) acts as barrier (quantum well) material. The investigation involves a number of simulations carried out by Silvaco TCAD software tool. The effects of InAs-QWs on the carrier absorption and the carrier recombination have been thoroughly analyzed. The physics-based analysis reveals that there is a maximum limit of the number of InAs-QWs that can be inserted in the intrinsic absorber layer to achieve optimum quantum efficiency and this limit is set by the competition of the photon absorption and the losses incurred optically as well as electronically in the cell.