Hybrid Based Substrate Modeling of MOSFET: A Review

Authors

  • Charu Dua
  • Jyoti Sehgal
  • Rajiv Sharma

Keywords:

NMOS, SiGe, hybrid MOSFET, HfO2, SiO2, temperature variation

Abstract

A comparative study of different substrate materials has been done. In this paper, we have
focused on the SiGe MOSFET and Hybrid MOSFET. The extraordinary characteristics of
both MOSFETs make them a promising candidate for applications in MOS transistors. The
effect of wide range of temperature has also been studied for different substrate materials.

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Published

2016-07-12

How to Cite

Charu Dua, Jyoti Sehgal, & Rajiv Sharma. (2016). Hybrid Based Substrate Modeling of MOSFET: A Review. Journal of Power Electronics and Devices, 1(2), 9–13. Retrieved from http://matjournals.co.in/index.php/JOPED/article/view/6520

Issue

Vol. 1 No. 2 (2016)

Section

Articles