Performance Comparison of Pseudo-p and Complementary OTFT-based Combinational Circuits


  • Taniza Marium Ahsanullah University of Science and Technology
  • S. M. Ishraqul Huq Ahsanullah University of Science and Technology
  • Oli Lowna Baroi Ahsanullah University of Science and Technology
  • Sateyndra Nath Biswas


Complementary, Logic circuits, Organic thin film transistors (OTFTs), Propagation delay, Pseudo p


The popularity of organic thin film transistors (OTFTs) is rising as a result of their unique qualities, including flexibility, low temperature, low cost, and lightweight characteristics. Conventional semiconductor-based logic circuits perform unquestionably better, but their production costs and flexibility are some limitations. Organic logic circuits offer the perfect option since they are affordable, adaptable, biodegradable, and capable of delivering excellent performance. As a result, OTFT-based electronics have found their way into applications in consumer, industrial, commercial, and medical equipment. Several OTFT applications essentially demand inverters and universal logic gates. Due to the higher carrier-mobility of p-type organic semiconductor (OSC) compared to n-type OSC, the adoption of single-transistor using pseudo-p-type topology is mostly used to construct OTFT-based circuits. However, the electrical performances in this scenario are sometimes viewed as being inferior to their  complementary equivalents. A complementary design is advantageous for creating a high-performance logic circuit. In this paper, pseudo-p OTFT (only p-type OTFT) and complementary OTFT (p-type and n-type OTFT) based logic gates and combinational circuits are designed and their performance is evaluated. A compact spice model is used to simulate pOTFT and nOTFT by using LTSpice software. The various logic gates and combinational circuits created using complementary OTFT perform better than pseudo-pOTFT in terms of power dissipation delays according to extensive simulation data.